

A modified wrinkle-free MoS 2 film transfer method for large area high mobility field-effect transistor. Realization of room-temperature phonon-limited carrier transport in monolayer MoS 2 by dielectric and carrier screening. Charge scattering and mobility in atomically thin semiconductors.

Insulators for 2D nanoelectronics: the gap to bridge. High mobility ambipolar MoS 2 field-effect transistors: substrate and dielectric effects.
Carbon disulfide how to#
How to report and benchmark emerging field-effect transistors. & Romanowicz, B.) 180–183 (Nano Science and Technology Institute, CRC, 2011).Ĭheng, Z. 2011 NSTI Nanotechnology Conference and Expo Vol. An accurate method to extract and separate interface and gate oxide traps by the MOSFET subthreshold current. Impact of current flow shape in tapered (versus rectangular) FinFET on threshold voltage variation induced by work-function variation. (eds) Mechanisms of Reactions of Organometallic Compounds with Surfaces (Plenum, 2014). Carbon Incorporation in MOCVD of MoS 2 thin films grown from an organosulfide precursor. High-mobility MoS 2 directly grown on polymer substrate with kinetics-controlled metal–organic chemical vapor deposition. Synthesis of high-performance monolayer molybdenum disulfide at low temperature. High-performance hybrid electronic devices from layered PtSe 2 films grown at low Temperature. High-gain phototransistors based on a CVD MoS 2 monolayer. Material innovation for MOL, BEOL, and 3D integration. Wafer-scale monolithic integration of full-colour micro-LED display using MoS 2 transistor. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix. 2021 IEEE International Electron Devices Meeting (IEDM) 7.1.1–7.1.4 (IEEE, 2021) Advancing 2D monolayer CMOS through contact, channel and interface engineering. Wafer-scale integration of double gated WS 2-transistors in 300 mm Si CMOS fab. Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Integrated biosensor platform based on graphene transistor arrays for real-time high-accuracy ion sensing. Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting. 2D material for future heterogeneous electronics. Scaled indium oxide transistors fabricated using atomic layer deposition. Integrated circuits based on bilayer MoS 2 transistors. Modern microprocessor built from complementary carbon nanotube transistors. How 2D semiconductors could extend Moore’s law. Science and research policy at the end of Moore’s law. We believe that this is an important step towards monolithic 3D integration for future electronics. Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V −1 s −1. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. Here we report a low-thermal-budget synthesis method (growth temperature < 300 ☌, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 ☌). Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties.
